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Fabrication and Electrical Properties of Chemical Bath Deposited CdS-Based Transparent Thin-Film-Transistors

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dc.contributor.authorKwon, J. H.-
dc.contributor.authorAhn, J. S.-
dc.contributor.authorYang, H.-
dc.date.accessioned2022-06-23T01:41:38Z-
dc.date.available2022-06-23T01:41:38Z-
dc.date.created2022-06-23-
dc.date.issued2011-
dc.identifier.issn1883-2490-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29679-
dc.description.abstractUsing CdS active layer generated by a chemical bath deposition, transparent thin-film-transistors (TFTs) were fabricated with a bottom-gate scheme of glass/ITO/SiNx/CdS/Al. After annealing as-grown CdS at 350 degrees C, fabricated transparent TFT exhibited a saturated field effect mobility of 0.7 cm(2)/V.s, a threshold voltage of 11.3 V and an on/off ratio of similar to 10(7).-
dc.language영어-
dc.language.isoen-
dc.publisherINST IMAGE INFORMATION & TELEVISION ENGINEERS-
dc.subjectNANORODS-
dc.subjectZNO-
dc.titleFabrication and Electrical Properties of Chemical Bath Deposited CdS-Based Transparent Thin-Film-Transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorYang, H.-
dc.identifier.wosid000393147800028-
dc.identifier.bibliographicCitationIDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.117 - 120-
dc.relation.isPartOfIDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3-
dc.citation.titleIDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3-
dc.citation.startPage117-
dc.citation.endPage120-
dc.type.rimsART-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaOptics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryOptics-
dc.subject.keywordPlusNANORODS-
dc.subject.keywordPlusZNO-
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