Surface Modifications of Organic Buffer Layer/Inorganic Dielectric in Zinc Oxide Transistors
- Authors
- Yang, Jin-Woo; Kim, Jun-Ho; Lee, Ho-Won; Hyung, Gun-Woo; Kim, Young Kwan
- Issue Date
- 2010
- Publisher
- IEEE
- Citation
- INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, pp.1260 - +
- Journal Title
- INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
- Start Page
- 1260
- End Page
- +
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29706
- Abstract
- We report on the fabrication of top-contact ZnO field-effect transistors (FETs) with organic buffer dielectric on the inorganic dielectric. In flexible electronics, most inorganic semiconductors and dielectrics, including amorphous silicon, may be inc mantle with temperatur-sensitive plastic substrate.s. While organic semiconductots and organic dielectrics may seem well suited to this particular application niche. Therefore, ht this paper, we show Dud ZnO-FETs using proven inorganic semiconductor such as ZnO with organic frail& dielectric is a promising candidate of the flexible displays for flexible electronics, because ZnO-FETs can be Jbbricated at CPVA buffer dielectric layer with mobility fo 0.34 cm//Vs) and on/off current ratio (> 4x10(6)) at below 120 degrees C
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Collections - College of Engineering > Department of Science > 1. Journal Articles
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