Surface Modifications of Organic Buffer Layer/Inorganic Dielectric in Zinc Oxide Transistors

Abstract

We report on the fabrication of top-contact ZnO field-effect transistors (FETs) with organic buffer dielectric on the inorganic dielectric. In flexible electronics, most inorganic semiconductors and dielectrics, including amorphous silicon, may be inc mantle with temperatur-sensitive plastic substrate.s. While organic semiconductots and organic dielectrics may seem well suited to this particular application niche. Therefore, ht this paper, we show Dud ZnO-FETs using proven inorganic semiconductor such as ZnO with organic frail& dielectric is a promising candidate of the flexible displays for flexible electronics, because ZnO-FETs can be Jbbricated at CPVA buffer dielectric layer with mobility fo 0.34 cm//Vs) and on/off current ratio (> 4x10(6)) at below 120 degrees C