Contact resistance variation of top-contact organic thin film transistor with the deposition rate of Au electrode
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Jong Mook | - |
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Kim, Hyunsuck | - |
dc.contributor.author | Bong, Kang Wook | - |
dc.contributor.author | Lee, Hyun Jung | - |
dc.contributor.author | Kim, Hye Min | - |
dc.contributor.author | Kim, Jae Hyuk | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.date.accessioned | 2022-07-05T08:43:18Z | - |
dc.date.available | 2022-07-05T08:43:18Z | - |
dc.date.created | 2022-07-05 | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29961 | - |
dc.description.abstract | The performance of organic thin film transistors (OTFTs) can be influenced by geometrical or extrinsic factors. Among these factors, contact resistance between source/drain electrodes and organic semiconductor layer is one of the critical parameters for the performance of OTFTs. In this study, contact resistances were extracted from the measured characteristics of top-contact OTFTs with various channel lengths for different deposition rates of Au for the source/drain contacts. It is observed that the extracted contact resistances were on the range of about 10(6)-10(11) ohm with the significant gate-bias dependence and could be lowered with increasing the deposition rate of An. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | EAST CHINA NORMAL UNIVERSITY | - |
dc.title | Contact resistance variation of top-contact organic thin film transistor with the deposition rate of Au electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.wosid | 000248022601134 | - |
dc.identifier.bibliographicCitation | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2, pp.1678 - 1681 | - |
dc.relation.isPartOf | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | - |
dc.citation.title | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | - |
dc.citation.startPage | 1678 | - |
dc.citation.endPage | 1681 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 3 | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | organic thin film transistor | - |
dc.subject.keywordAuthor | pentacene | - |
dc.subject.keywordAuthor | contact resistance | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.