Contact resistance variation of top-contact organic thin film transistor with the deposition rate of Au electrode

Abstract

The performance of organic thin film transistors (OTFTs) can be influenced by geometrical or extrinsic factors. Among these factors, contact resistance between source/drain electrodes and organic semiconductor layer is one of the critical parameters for the performance of OTFTs. In this study, contact resistances were extracted from the measured characteristics of top-contact OTFTs with various channel lengths for different deposition rates of Au for the source/drain contacts. It is observed that the extracted contact resistances were on the range of about 10(6)-10(11) ohm with the significant gate-bias dependence and could be lowered with increasing the deposition rate of An.