Contact resistance variation of top-contact organic thin film transistor with the deposition rate of Au electrode
- Authors
- Kang, Jong Mook; Park, Jaehoon; Kim, Hyunsuck; Bong, Kang Wook; Lee, Hyun Jung; Kim, Hye Min; Kim, Jae Hyuk; Choi, Jong Sun
- Issue Date
- 2007
- Publisher
- EAST CHINA NORMAL UNIVERSITY
- Keywords
- organic thin film transistor; pentacene; contact resistance
- Citation
- AD'07: Proceedings of Asia Display 2007, Vols 1 and 2, pp.1678 - 1681
- Journal Title
- AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
- Start Page
- 1678
- End Page
- 1681
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29961
- Abstract
- The performance of organic thin film transistors (OTFTs) can be influenced by geometrical or extrinsic factors. Among these factors, contact resistance between source/drain electrodes and organic semiconductor layer is one of the critical parameters for the performance of OTFTs. In this study, contact resistances were extracted from the measured characteristics of top-contact OTFTs with various channel lengths for different deposition rates of Au for the source/drain contacts. It is observed that the extracted contact resistances were on the range of about 10(6)-10(11) ohm with the significant gate-bias dependence and could be lowered with increasing the deposition rate of An.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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