Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Activation behavior of SLS and ELC poly-Si after ion shower doping
- Issue Date
- 2006
- Publisher
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- Citation
- IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.769 - +
- Journal Title
- IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
- Start Page
- 769
- End Page
- +
- Abstract
- Thermal activation was carried out using SLS poly-Si or ELC poly-Si after B+ ion shower doping. Reverse annealing was found in the temperature ranges between 400 degrees C and 650 degrees C investigated in this study. Grain boundaries seemed to play a critical role for dopant activation in poly-Si at low temperatures. The RTA treated samples were observed to exhibit lower sheet resistance than the FA treated one. The reverse annealing is believed to play an important role for activation efficiency.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.