Joule-heating induced crystallization using a conductive layer (JICCL): Millisecond-crystallization

Abstract

An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Uniformly distributed fine grains were obtained due to enormously high heating rate of this process. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films.