Joule-heating induced crystallization using a conductive layer (JICCL): Millisecond-crystallization
DC Field | Value | Language |
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dc.contributor.author | Hong, Won-Eui | - |
dc.contributor.author | Lee, Joo-Yeol | - |
dc.contributor.author | Ro, Jae-Sang | - |
dc.date.accessioned | 2022-07-07T07:40:57Z | - |
dc.date.available | 2022-07-07T07:40:57Z | - |
dc.date.created | 2022-07-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30012 | - |
dc.description.abstract | An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Uniformly distributed fine grains were obtained due to enormously high heating rate of this process. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST IMAGE INFORMATION & TELEVISION ENGINEERS | - |
dc.subject | SILICON FILMS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | LATERAL CRYSTALLIZATION | - |
dc.subject | RAPID CRYSTALLIZATION | - |
dc.subject | GROWTH | - |
dc.title | Joule-heating induced crystallization using a conductive layer (JICCL): Millisecond-crystallization | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae-Sang | - |
dc.identifier.wosid | 000258482700174 | - |
dc.identifier.bibliographicCitation | IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.685 - 688 | - |
dc.relation.isPartOf | IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | - |
dc.citation.title | IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | - |
dc.citation.startPage | 685 | - |
dc.citation.endPage | 688 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 3 | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON FILMS | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | LATERAL CRYSTALLIZATION | - |
dc.subject.keywordPlus | RAPID CRYSTALLIZATION | - |
dc.subject.keywordPlus | GROWTH | - |
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