Joule-heating induced crystallization using a conductive layer (JICCL): Millisecond-crystallization
- Authors
- Hong, Won-Eui; Lee, Joo-Yeol; Ro, Jae-Sang
- Issue Date
- 2006
- Publisher
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- Citation
- IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.685 - 688
- Journal Title
- IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
- Start Page
- 685
- End Page
- 688
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30012
- Abstract
- An electric field was applied to a conductive layer to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Uniformly distributed fine grains were obtained due to enormously high heating rate of this process. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30012)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.