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Reverse annealing of P+/B+ ion shower doped poly-Si
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jin, Beop-Jong | - |
| dc.contributor.author | Hong, Won-Eui | - |
| dc.contributor.author | Ro, Jae-Sang | - |
| dc.date.accessioned | 2022-07-07T07:41:19Z | - |
| dc.date.available | 2022-07-07T07:41:19Z | - |
| dc.date.created | 2022-07-07 | - |
| dc.date.issued | 2006 | - |
| dc.identifier.issn | 1738-7558 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30032 | - |
| dc.description.abstract | Reverse annealing was observed in P+/B+ ion shower doped poly-Si upon activation annealing Phosphorous or boron was implanted by ion shower doping using a source gas mixture of PH3/H-2 or B2H6/H-2. Activation annealing was conducted using a tube furnace in the temperature ranges from 350 degrees C to 650 degrees C. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and BB, respectively. It was observed that reverse annealing starts at 550 degrees C in P+ ion shower doped poly-Si, while at 350 degrees C in the case of B-doping. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN INFORMATION DISPLAY SOC | - |
| dc.subject | POLYCRYSTALLINE SILICON | - |
| dc.subject | JUNCTIONS | - |
| dc.title | Reverse annealing of P+/B+ ion shower doped poly-Si | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ro, Jae-Sang | - |
| dc.identifier.wosid | 000259669300160 | - |
| dc.identifier.bibliographicCitation | IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, pp.752 - 755 | - |
| dc.relation.isPartOf | IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | - |
| dc.citation.title | IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | - |
| dc.citation.startPage | 752 | - |
| dc.citation.endPage | 755 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
| dc.subject.keywordPlus | JUNCTIONS | - |
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