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Reverse annealing of P+/B+ ion shower doped poly-Si
- Authors
- Jin, Beop-Jong; Hong, Won-Eui; Ro, Jae-Sang
- Issue Date
- 2006
- Publisher
- KOREAN INFORMATION DISPLAY SOC
- Citation
- IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, pp.752 - 755
- Start Page
- 752
- End Page
- 755
- ISSN
- 1738-7558
- Abstract
- Reverse annealing was observed in P+/B+ ion shower doped poly-Si upon activation annealing Phosphorous or boron was implanted by ion shower doping using a source gas mixture of PH3/H-2 or B2H6/H-2. Activation annealing was conducted using a tube furnace in the temperature ranges from 350 degrees C to 650 degrees C. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and BB, respectively. It was observed that reverse annealing starts at 550 degrees C in P+ ion shower doped poly-Si, while at 350 degrees C in the case of B-doping.
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