A two-level redundancy scheme for enhancing scalability of molecular-based crossbar memories

Abstract

This paper presents a two-level redundancy scheme for enhancing scalability of molecular-based crossbar memories. It is based on multiple molecular memory modules with spares and address translation to cope with the expected high rate of defects in chemically fabricated nanocircuits. Molecular crossbars on top of a silicon-based die providing address translation will demonstrate a notable improvement in scalability of defect-prone molecular memories.