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A High-Performance, Low-Power 8-Bit Full-Adder Using 8+T Differential SRAM for Computation-inMemory

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dc.contributor.authorJung, J.-
dc.contributor.authorKim, Y.-
dc.date.accessioned2023-02-28T01:43:13Z-
dc.date.available2023-02-28T01:43:13Z-
dc.date.created2023-02-28-
dc.date.issued2022-01-01-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30882-
dc.description.abstractAs the amount of data increases in the era of artificial intelligence (AI), in-memory computing (IMC) circuits are being studied to solve the von Neumann bottleneck, a problem in modern computer architecture. This paper proposes an XOR operator based on 8+T differential static random-access memory (8+T SRAM) and an 8-bit Full-Adder based on it. Simulation results in 65 nm show that the XOR operation is 47% faster than the previous method, the Full-Adder is 43% faster, consumes 32% less energy with 14% less transistor. © 2022 IEEE.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA High-Performance, Low-Power 8-Bit Full-Adder Using 8+T Differential SRAM for Computation-inMemory-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Y.-
dc.identifier.doi10.1109/ISOCC56007.2022.10031417-
dc.identifier.scopusid2-s2.0-85148470819-
dc.identifier.wosid000971297000065-
dc.identifier.bibliographicCitationProceedings - International SoC Design Conference 2022, ISOCC 2022, pp.131 - 132-
dc.relation.isPartOfProceedings - International SoC Design Conference 2022, ISOCC 2022-
dc.citation.titleProceedings - International SoC Design Conference 2022, ISOCC 2022-
dc.citation.startPage131-
dc.citation.endPage132-
dc.type.rimsART-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaComputer Science-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryComputer Science, Hardware & Architecture-
dc.relation.journalWebOfScienceCategoryComputer Science, Theory & Methods-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordAuthorFull-Adder-
dc.subject.keywordAuthorIn-Memory Computing(IMC)-
dc.subject.keywordAuthorProcess-in-Memory(PIM)-
dc.subject.keywordAuthorSRAM-
dc.subject.keywordAuthorXOR operator-
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