Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications
DC Field | Value | Language |
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dc.contributor.author | Choi, Woong | - |
dc.contributor.author | Jeon, Dae-Woo | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Lee, Dongryul | - |
dc.contributor.author | Lee, Soobeen | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2023-09-27T07:40:18Z | - |
dc.date.available | 2023-09-27T07:40:18Z | - |
dc.date.issued | 2023-09 | - |
dc.identifier.issn | 2633-5409 | - |
dc.identifier.issn | 2633-5409 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/31704 | - |
dc.description.abstract | The development of an etching process with controllable etching rate and high selectivity is key to fabricating high-performance electronic and optoelectronic devices. In this paper, we report the photo-enhanced metal-assisted chemical (PE-MAC) etching of an ultrawide-bandgap (UWBG) alpha-phase gallium oxide (α-Ga2O3) semiconductor grown using a halide vapor-phase epitaxy technique. Using the PE-MAC etching process, the reproducible etch of an α-Ga2O3 epilayer was demonstrated at a rate of 8.24 nm min−1 at room temperature; the extent of the reaction increased linearly with increasing time. The Arrhenius plot of the etching rate indicated that this process is an activation-controlled reaction with a high activation energy of 0.90 eV (86.7 kJ mol−1). The Pt metal electrode, which can be removed using an acid solution, created a depletion region, making the exposed α-Ga2O3 epilayer etched with a smooth and tilted sidewall. The effects of the roughness at different etch temperatures were also investigated. An α-Ga2O3-based metal-semiconductor-metal (MSM) photodetector was fabricated by using the proposed PE-MAC etching process, and the fabricated MSM photodetector exhibited improved time-dependent photoresponse characteristics with reduced defect-related time constants, confirming that our PE-MAC etching is a damage-free fabrication process with high anisotropy and selectivity. Our study demonstrates that the PE-MAC etching is an effective wet process for manufacturing electronic and optical devices based on UWBG α-Ga2O3 semiconductors at room temperature without vacuum plasma equipment. © 2023 RSC. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/d3ma00424d | - |
dc.identifier.scopusid | 2-s2.0-85171642885 | - |
dc.identifier.wosid | 001074540100001 | - |
dc.identifier.bibliographicCitation | Materials Advances, v.4, no.19, pp 4520 - 4527 | - |
dc.citation.title | Materials Advances | - |
dc.citation.volume | 4 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 4520 | - |
dc.citation.endPage | 4527 | - |
dc.type.docType | Article; Early Access | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | esci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
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