Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ngoc Van, Tran Thi | - |
dc.contributor.author | Shong, Bonggeun | - |
dc.date.accessioned | 2023-11-22T06:40:22Z | - |
dc.date.available | 2023-11-22T06:40:22Z | - |
dc.date.issued | 2023-11 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.issn | 2093-6788 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/31864 | - |
dc.description.abstract | Atomic layer deposition (ALD) is a promising technique for fabricating high-quality thin films. For improving the process conditions and material quality of ALD, understanding the surface chemical mechanisms at the molecular level is important as the entire ALD process is based on the reactions of precursors on the substrate surfaces. Zinc oxynitride (ZnON) is gaining significant research interest as a p-type semiconductor material. Although the ALD of ZnON can be performed by dosing H2O and NH3 as oxygen and nitrogen sources, respectively, the elemental ratio of O and N in the deposited film differs considerably from that in the gaseous sources. In this study, the surface reactions of ZnON ALD are analyzed employing density functional theory calculations. All the ALD surface reactions of ZnO and ZnN are facile and expected to occur rapidly. However, the substitution of a surface *NH2 by H2O to form *OH is preferred, whereas the inverse reaction is implausible. We propose that the differences in the reactivity could originate from the higher bond energy of Zn–O than that of Zn–N. Graphical Abstract: [Figure not available: see fulltext.]. © 2023, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Korean Institute of Metals and Materials | - |
dc.title | Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON) | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.doi | 10.1007/s13391-023-00467-8 | - |
dc.identifier.scopusid | 2-s2.0-85176591822 | - |
dc.identifier.wosid | 001103391500001 | - |
dc.identifier.bibliographicCitation | Electronic Materials Letters | - |
dc.citation.title | Electronic Materials Letters | - |
dc.type.docType | Article; Early Access | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordAuthor | Computational chemistry | - |
dc.subject.keywordAuthor | N-doped ZnO | - |
dc.subject.keywordAuthor | Surface chemistry | - |
dc.subject.keywordAuthor | Zinc nitride | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | ZnO<sub>x</sub>N<sub>y</sub> | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.