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Electrochemical Evaluation of Copper Etchant to Minimize Galvanic Etching

Authors
Choi, Jong-ChanLee, Yong-SuLee, Jae-Ho
Issue Date
Oct-2018
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Copper Etching; Galvanic Corrosion; Open Circuit Voltage; Au/Cu Couple
Citation
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.10, no.10, pp.1377 - 1379
Journal Title
NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume
10
Number
10
Start Page
1377
End Page
1379
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3188
DOI
10.1166/nnl.2018.2787
ISSN
1941-4900
Abstract
In the PCB industry, Cu is the most commonly used metal for circuit line and pad materials. After the wiring process, soft etching is performed to remove the copper oxide layer formed on the circuit or pad. When Au is applied to lower some contact resistance, Cu is excessively etched by a galvanic coupling of Au and Cu. In this study, electrochemical evaluation such as open circuit voltage (OCV) and polarization curve in two different solutions were analyzed since the over etching phenomenon was observed only in the case of Au and Cu galvanic coupling. Finally, the etching conditions in which over etching did not occur even in the galvanic couple of Au and Cu were confirmed.
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