Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor-and Horizontal Floating-Gate FET-Type Gas Sensors
DC Field | Value | Language |
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dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Koo, Ryun-Han | - |
dc.contributor.author | Hong, Seongbin | - |
dc.contributor.author | Jung, Gyuweon | - |
dc.contributor.author | Jeong, Yujeong | - |
dc.contributor.author | Lee, Sung-Tae | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.accessioned | 2024-01-03T05:30:34Z | - |
dc.date.available | 2024-01-03T05:30:34Z | - |
dc.date.issued | 2023-11 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32398 | - |
dc.description.abstract | We investigate the effects of sensor platform scaling on signal-to-noise-ratio (SNR) in the resistor-and field-effect-transistor (FET)-type gas sensors with horizontal floating gate (FG). Indium–gallium–zinc oxide (IGZO) is used as a sensing material and deposited by the RF sputtering method. The low-frequency noise (LFN) characteristics of the resistor-and FET-type gas sensors are determined by the sensing material and FET transducer, respectively. In both resistor-and FET-type gas sensors, the SNR decreases with the scaling of the sensing area. However, the reason for a decrease in the SNR differs depending on the sensor platform. The decrease in SNR in a resistor-type gas sensor is due to an increase in intrinsic device noise and gas-to-air-noise ratio (GANR), whereas a decrease in SNR in an FET-type gas sensor is due to a decrease in response. The results provide important design guidelines in designing and fabricating the resistor-and FET-type gas sensors. IEEE | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor-and Horizontal Floating-Gate FET-Type Gas Sensors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2023.3312060 | - |
dc.identifier.scopusid | 2-s2.0-85171549264 | - |
dc.identifier.wosid | 001071979600001 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.70, no.11, pp 1 - 6 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 70 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Indium–gallium–zinc oxide (IGZO) | - |
dc.subject.keywordAuthor | low-frequency noise (LFN) | - |
dc.subject.keywordAuthor | nitrogen dioxide (NO<inline-formula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchema-instance> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula>) | - |
dc.subject.keywordAuthor | scaling | - |
dc.subject.keywordAuthor | signal-to-noise ratio (SNR) | - |
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