Advanced HIL strategies in QLEDs: V<sub>2</sub>O<sub>5</sub> and PEDOT:PSS dual-layer for charge balance and electron leakage prevention
DC Field | Value | Language |
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dc.contributor.author | Bin Cho, Han | - |
dc.contributor.author | Kim, Ha Jun | - |
dc.contributor.author | Viswanath, Noolu Srinivasa Manikanta | - |
dc.contributor.author | Samanta, Tuhin | - |
dc.contributor.author | Min, Jeong Wan | - |
dc.contributor.author | Jang, Sung Woo | - |
dc.contributor.author | Park, Yong Min | - |
dc.contributor.author | Jang, Se Hyuk | - |
dc.contributor.author | Yang, Heesun | - |
dc.contributor.author | Im, Won Bin | - |
dc.date.accessioned | 2024-02-27T03:00:28Z | - |
dc.date.available | 2024-02-27T03:00:28Z | - |
dc.date.issued | 2024-01-24 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32706 | - |
dc.description.abstract | Quantum dot light emitting devices (QLEDs) show promise for displays, with polyethylenedioxythiophene: polystyrene (PEDOT:PSS) commonly used as a hole injection layer (HIL) due to its high conductivity and work function. However, PEDOT:PSS-based QLEDs face an energy barrier, reducing efficiency. Herein, in this work, we used the rapid thermal annealing (RTA) process to improve the conductivity by controlling the RTA processing time which reduced the interfacial resistance. This improves charge balance and long-term stability by preventing electron leakage. The optimized V2O5 /PEDOT:PSS-based QLED, with an EQE of 18%, CE of 77 cd A(-1 )and maximum luminance of 23 242 cd m(-2), outperforms the PEDOT:PSS-based counterpart. This highlights the strategic superiority of V2O5 HIL in our QLED. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Advanced HIL strategies in QLEDs: V<sub>2</sub>O<sub>5</sub> and PEDOT:PSS dual-layer for charge balance and electron leakage prevention | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/d3tc04652d | - |
dc.identifier.scopusid | 2-s2.0-85183999315 | - |
dc.identifier.wosid | 001153946800001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.12, no.9, pp 3196 - 3202 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 12 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 3196 | - |
dc.citation.endPage | 3202 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | HOLE-TRANSPORT LAYER | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | MOLYBDENUM | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | DEVICES | - |
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