Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing
DC Field | Value | Language |
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dc.contributor.author | Ku, J. | - |
dc.contributor.author | Lee, K. | - |
dc.contributor.author | Jung, D. | - |
dc.contributor.author | Wang, D. | - |
dc.contributor.author | Oh, S. | - |
dc.contributor.author | Lee, K. | - |
dc.contributor.author | Cho, B. | - |
dc.contributor.author | Bae, H. | - |
dc.contributor.author | Park, J. | - |
dc.date.accessioned | 2024-04-16T02:31:30Z | - |
dc.date.available | 2024-04-16T02:31:30Z | - |
dc.date.issued | 2023-01-01 | - |
dc.identifier.issn | 1530-4388 | - |
dc.identifier.issn | 1558-2574 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32933 | - |
dc.description.abstract | Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance-voltage (C-V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique. IEEE | - |
dc.format.extent | 1 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TDMR.2023.3270920 | - |
dc.identifier.scopusid | 2-s2.0-85159725688 | - |
dc.identifier.wosid | 001004188300013 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Device and Materials Reliability, v.23, no.2, pp 1 - 1 | - |
dc.citation.title | IEEE Transactions on Device and Materials Reliability | - |
dc.citation.volume | 23 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 1 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HOT-CARRIER RELIABILITY | - |
dc.subject.keywordPlus | QUANTITATIVE-ANALYSIS | - |
dc.subject.keywordPlus | DEUTERIUM | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | Deuterium | - |
dc.subject.keywordAuthor | Deuterium | - |
dc.subject.keywordAuthor | hot-carrier injection (HCI) | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | Logic gates | - |
dc.subject.keywordAuthor | nitrogen | - |
dc.subject.keywordAuthor | Nitrogen | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Substrates | - |
dc.subject.keywordAuthor | Transmission electron microscopy | - |
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