Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing
- Authors
- Ku, J.; Lee, K.; Jung, D.; Wang, D.; Oh, S.; Lee, K.; Cho, B.; Bae, H.; Park, J.
- Issue Date
- 1-Jan-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Annealing; annealing; Deuterium; Deuterium; hot-carrier injection (HCI); interface trap; Logic gates; nitrogen; Nitrogen; Silicon; Substrates; Transmission electron microscopy
- Citation
- IEEE Transactions on Device and Materials Reliability, v.23, no.2, pp 1 - 1
- Pages
- 1
- Journal Title
- IEEE Transactions on Device and Materials Reliability
- Volume
- 23
- Number
- 2
- Start Page
- 1
- End Page
- 1
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32933
- DOI
- 10.1109/TDMR.2023.3270920
- ISSN
- 1530-4388
1558-2574
- Abstract
- Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance-voltage (C-V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique. IEEE
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