Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing
- Issue Date
- 1-Jan-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Annealing; annealing; Deuterium; Deuterium; hot-carrier injection (HCI); interface trap; Logic gates; nitrogen; Nitrogen; Silicon; Substrates; Transmission electron microscopy
- Citation
- IEEE Transactions on Device and Materials Reliability, v.23, no.2, pp 1 - 1
- Pages
- 1
- Journal Title
- IEEE Transactions on Device and Materials Reliability
- Volume
- 23
- Number
- 2
- Start Page
- 1
- End Page
- 1
- ISSN
- 1530-4388
1558-2574
- Abstract
- Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance-voltage (C-V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique. IEEE
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Lee, Kiyoung
- Engineering (Advanced Materials)