Effects of Ti Doping on TaFeSb Half-Heuslers Estimated by a Single Parabolic Band Model
- Authors
- Park, Hyunjin; Kim, Sang-il; Lee, Kiyoung; Seo, Won-Seon; Kim, Hyun-Sik
- Issue Date
- 1-Nov-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- half-Heusler; TaFeNb; density-of-states effective mass; weighted mobility; thermoelectric
- Citation
- CHEMNANOMAT, v.8, no.11
- Journal Title
- CHEMNANOMAT
- Volume
- 8
- Number
- 11
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32959
- DOI
- 10.1002/cnma.202200370
- ISSN
- 2199-692X
- Abstract
- Recent discovery of new p-type Ta1-xTixFeSb-based half-Heusler thermoelectric alloy has drawn much attention due to its high thermoelectric performance, zT of similar to 1.52 near 970 K. However, the electronic band parameters of TaFeSb nor Ti-doped TaFeSb have not been studied so far. Here we report the band parameters of Ta1-xTixFeSb (x=0-0.16) calculated by the Single Parabolic Band model. Ti doping (x=0.12) both increases the density-of-states effective mass and non-degenerate mobility by 27 and 29 times compared to those of the pristine TaFeSb (x=0). This simultaneous increase results in weighted mobility improvement by a factor of 4000 with Ti doping of x=0.12. Based on the estimated weighted mobility and the lattice thermal conductivity, the 300 K zT of Ta0.88Ti0.12FeSb (x=0.12) can be further increased by 10% once the carrier concentration is appropriately tuned.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32959)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.