Band Alignment Transition and Enhanced Performance in Vertical SnS<sub>2</sub>/MoS<sub>2</sub> van der Waals Photodetectors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shi, Mingyu | - |
dc.contributor.author | Lv, Yanhui | - |
dc.contributor.author | Wu, Gang | - |
dc.contributor.author | Cho, Jiung | - |
dc.contributor.author | Abid, Mohamed | - |
dc.contributor.author | Hung, Kuan-Ming | - |
dc.contributor.author | Coileain, Cormac O. | - |
dc.contributor.author | Chang, Ching-Ray | - |
dc.contributor.author | Wu, Han-Chun | - |
dc.date.accessioned | 2024-05-30T08:31:21Z | - |
dc.date.available | 2024-05-30T08:31:21Z | - |
dc.date.issued | 2024-04-16 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33171 | - |
dc.description.abstract | The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers. | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Band Alignment Transition and Enhanced Performance in Vertical SnS<sub>2</sub>/MoS<sub>2</sub> van der Waals Photodetectors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsami.4c00781 | - |
dc.identifier.scopusid | 2-s2.0-85190733262 | - |
dc.identifier.wosid | 001203613100001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.16, no.17, pp 22622 - 22631 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 16 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 22622 | - |
dc.citation.endPage | 22631 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | BROAD-BAND | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | PROGRESS | - |
dc.subject.keywordAuthor | SnS2/MoS2 | - |
dc.subject.keywordAuthor | band alignment | - |
dc.subject.keywordAuthor | broadband photodetector | - |
dc.subject.keywordAuthor | van der Waals heterojunction | - |
dc.subject.keywordAuthor | photoluminescence quenching | - |
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