Band Alignment Transition and Enhanced Performance in Vertical SnS<sub>2</sub>/MoS<sub>2</sub> van der Waals Photodetectors
- Authors
- Shi, Mingyu; Lv, Yanhui; Wu, Gang; Cho, Jiung; Abid, Mohamed; Hung, Kuan-Ming; Coileain, Cormac O.; Chang, Ching-Ray; Wu, Han-Chun
- Issue Date
- 16-Apr-2024
- Publisher
- AMER CHEMICAL SOC
- Keywords
- SnS2/MoS2; band alignment; broadband photodetector; van der Waals heterojunction; photoluminescence quenching
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.16, no.17, pp 22622 - 22631
- Pages
- 10
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 16
- Number
- 17
- Start Page
- 22622
- End Page
- 22631
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33171
- DOI
- 10.1021/acsami.4c00781
- ISSN
- 1944-8244
1944-8252
- Abstract
- The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.