Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Byeon, Junsung | - |
dc.contributor.author | Koo, Ryun-Han | - |
dc.contributor.author | Lim, Jungmoon | - |
dc.contributor.author | Kang, Jung Hyeon | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Kim, Jae-Joon | - |
dc.contributor.author | Cha, Seungnam | - |
dc.contributor.author | Pak, Sangyeon | - |
dc.contributor.author | Lee, Sung-Tae | - |
dc.date.accessioned | 2024-07-03T07:31:15Z | - |
dc.date.available | 2024-07-03T07:31:15Z | - |
dc.date.issued | 2024-05-21 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33226 | - |
dc.description.abstract | The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (I-D) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low I-D region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY | - |
dc.title | Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1002/advs.202307196 | - |
dc.identifier.scopusid | 2-s2.0-85193569427 | - |
dc.identifier.wosid | 001228414600001 | - |
dc.identifier.bibliographicCitation | ADVANCED SCIENCE | - |
dc.citation.title | ADVANCED SCIENCE | - |
dc.type.docType | Article; Early Access | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | COULD | - |
dc.subject.keywordAuthor | 1/f noise | - |
dc.subject.keywordAuthor | 2D TMDC | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | copper sulfide | - |
dc.subject.keywordAuthor | low-frequency noise | - |
dc.subject.keywordAuthor | self-healing effect | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.