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Surface modified solution-derived lanthanum-doped zinc oxide film for nematic liquid crystal system with free residual DC voltage

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dc.contributor.authorLee, Ju Hwan-
dc.contributor.authorKim, Eun-Mi-
dc.contributor.authorHeo, Gi-Seok-
dc.contributor.authorJeong, Hae-Chang-
dc.contributor.authorKim, Dong Hyun-
dc.contributor.authorLee, Dong Wook-
dc.contributor.authorHan, Jeong-Min-
dc.contributor.authorKim, Tae Wan-
dc.contributor.authorSeo, Dae-Shik-
dc.date.available2020-07-10T04:22:31Z-
dc.date.created2020-07-06-
dc.date.issued2018-07-01-
dc.identifier.issn0254-0584-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3464-
dc.description.abstractThe liquid crystal (LC) alignment characteristics of the solution-derived lanthanum-doped zinc oxide (La:ZnO) film with ion-beam (IB) irradiation were investigated as a function of curing temperature. The best LC alignment state with uniform and homogeneous alignment was achieved at a curing temperature of 300 degrees C. To observe the effect of the IB irradiation on the La:ZnO film, physical and chemical surface analyses were conducted. Atomic-force microscopy revealed that surface roughness was increased, and the leptokurtic surface was changed to a platykurtic surface after the IB irradiation. X-ray photoelectron spectroscopy showed the breakage of the metal-oxide bonds, which induced an increase of oxygen vacancies. This caused van der Waals force, which strongly anchored LC molecules to the La:ZnO film. These results indicated that uniform and homogeneous LC alignment with the solution-derived La:ZnO films was induced by physical and chemical surface modification due to the IB irradiation. Moreover, residual DC was characterized by a capacitance-voltage hysteresis curve and nearly zero hysteresis was achieved. Therefore, IB irradiation is a useful method to achieve uniform and homogenous LC alignment, and using it with the solution-derived La:ZnO film exhibited potential for high-quality LC applications. (C) 2018 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectALIGNMENT-
dc.subjectLAYERS-
dc.titleSurface modified solution-derived lanthanum-doped zinc oxide film for nematic liquid crystal system with free residual DC voltage-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Wan-
dc.identifier.doi10.1016/j.matchemphys.2018.04.023-
dc.identifier.scopusid2-s2.0-85047415613-
dc.identifier.wosid000433648600047-
dc.identifier.bibliographicCitationMATERIALS CHEMISTRY AND PHYSICS, v.213, pp.383 - 388-
dc.relation.isPartOfMATERIALS CHEMISTRY AND PHYSICS-
dc.citation.titleMATERIALS CHEMISTRY AND PHYSICS-
dc.citation.volume213-
dc.citation.startPage383-
dc.citation.endPage388-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusALIGNMENT-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordAuthorIon-beam irradiation-
dc.subject.keywordAuthorSolution processing-
dc.subject.keywordAuthorLanthanum-doped zinc oxide-
dc.subject.keywordAuthorSurface modification-
dc.subject.keywordAuthorCapacitance-voltage hysteresis-
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