Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High-k Dual MIS Structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Hwan | - |
dc.contributor.author | Park, Hongjong | - |
dc.contributor.author | Eom, Su-Keun | - |
dc.contributor.author | Jeong, Jun-Seok | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.date.available | 2020-07-10T04:22:34Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3475 | - |
dc.description.abstract | This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15-mu m AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | POWER-AMPLIFIER | - |
dc.subject | HEMTS | - |
dc.subject | TRANSISTORS | - |
dc.subject | VOLTAGE | - |
dc.subject | DEVICES | - |
dc.subject | SILICON | - |
dc.subject | LEAKAGE | - |
dc.title | Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High-k Dual MIS Structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1109/LED.2018.2834223 | - |
dc.identifier.scopusid | 2-s2.0-85046412054 | - |
dc.identifier.wosid | 000437087400018 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.39, no.7, pp.995 - 998 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 39 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 995 | - |
dc.citation.endPage | 998 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | POWER-AMPLIFIER | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | LEAKAGE | - |
dc.subject.keywordAuthor | AlGaN/GaN-on-Si | - |
dc.subject.keywordAuthor | gate recess | - |
dc.subject.keywordAuthor | dual MIS | - |
dc.subject.keywordAuthor | high-k | - |
dc.subject.keywordAuthor | MMIC | - |
dc.subject.keywordAuthor | power amplifier | - |
dc.subject.keywordAuthor | Ka-band | - |
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