Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
DC Field | Value | Language |
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dc.contributor.author | Keum, Dongmin | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.date.available | 2020-07-10T04:22:34Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 0011-2275 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3476 | - |
dc.description.abstract | We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed metal-oxidesemiconductor (MOS) structure and normally-on Schottky-gate high-electron-mobility-transistors (HEMTs). Device characteristics measured from 100 to 300 K exhibited the distinct temperature-dependence between two types of devices. While the increase of on-current was observed from normally-on AlGaN/GaN Schottky-gate HEMTs due to the enhanced mobility in the two-dimensional electron gas (2-DEG) channel, normally-off AlGaN/GaN gate-recessed MOSHFETs demonstrated distinctive characteristics at 100 K including the decrease of on-current and the positive shift of threshold voltage (V-th). The temperature-dependence observed in gate-recessed MOSHFETs is attributed to the different characteristics of the recessed channel from the 2-DEG channel, in which the sheet carrier density (n(sh)) and mobility (mu) were reduced as the temperature approaches the cryogenic regime. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | MIS-HEMTS | - |
dc.subject | MOBILITY | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | POLARIZATION | - |
dc.subject | DEVICES | - |
dc.title | Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.1016/j.cryogenics.2018.05.009 | - |
dc.identifier.scopusid | 2-s2.0-85047477131 | - |
dc.identifier.wosid | 000439400900008 | - |
dc.identifier.bibliographicCitation | CRYOGENICS, v.93, pp.51 - 55 | - |
dc.relation.isPartOf | CRYOGENICS | - |
dc.citation.title | CRYOGENICS | - |
dc.citation.volume | 93 | - |
dc.citation.startPage | 51 | - |
dc.citation.endPage | 55 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Thermodynamics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Thermodynamics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MIS-HEMTS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Low-temperature | - |
dc.subject.keywordAuthor | Cryogenic | - |
dc.subject.keywordAuthor | AlGaN/GaN-on-Si | - |
dc.subject.keywordAuthor | Normally-off | - |
dc.subject.keywordAuthor | Power | - |
dc.subject.keywordAuthor | Heterostructure | - |
dc.subject.keywordAuthor | Recessed-gate | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | 2-DEG | - |
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