Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ji, Seunggyu | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.contributor.author | Choi, Il Hwan | - |
dc.date.available | 2020-07-10T04:24:36Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3625 | - |
dc.description.abstract | A novel tunneling field effect transistor (TFET) with a recess channel is proposed. Proposed TFET has a thin intrinsic region and it is formed in the shape of surrounding the gate. The performance of the proposed device is analyzed through comparison with double gate thin intrinsic TFET (DGTI) TFET and double gate (DG) TFET structures. The comparison results of on-current (I-on) and subthreshold swing (S) with other devices shows that the proposed device has excellent characteristics. The effects of the structural parameters change of the device on the proposed device are analyzed and compared with the other two TFET structures. A guideline for the optimization of the proposed device is suggested. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.subject | DESIGN | - |
dc.subject | GATE | - |
dc.subject | PERFORMANCE | - |
dc.subject | DEVICE | - |
dc.subject | TFET | - |
dc.subject | FET | - |
dc.title | Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.5573/JSTS.2018.18.3.360 | - |
dc.identifier.scopusid | 2-s2.0-85049021991 | - |
dc.identifier.wosid | 000436275900010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.3, pp.360 - 366 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 18 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 360 | - |
dc.citation.endPage | 366 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002355636 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | TFET | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordAuthor | Tunneling field effect transistor | - |
dc.subject.keywordAuthor | recess channel transistor | - |
dc.subject.keywordAuthor | short channel effect | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.