Discharge Characteristics of a Triple-Well Diode-String ESD Clamp
- Authors
- 최진영
- Issue Date
- May-2018
- Publisher
- Scientific Research Publishing
- Citation
- Circuits and Systems, v.9, no.5, pp.75 - 86
- Journal Title
- Circuits and Systems
- Volume
- 9
- Number
- 5
- Start Page
- 75
- End Page
- 86
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3637
- ISSN
- 2153-1293
- Abstract
- In this work, DC and transient characteristics of a 4 diode string utilizing triple-well technologies as a VDD-VSS clamp device for ESD protection are analyzed in detail based on 2-dimensional device and mixed-mode simula-tions. It is shown that there exists parasitic pnp bipolar transistor action in this device leading to a sudden increase in DC substrate leakage if anode bias is getting high. Through transient simulations for a 2000 V PS-mode HBM ESD discharge event, it is shown that the dominant discharge path is the one formed by a parasitic pnpn thyristor and a parasitic npn bipolar transistor in series. Percentage ratios of the various current components regarding the anode current at its current peaking are provided. The mechanisms involved in ESD discharge inside the diode-string clamp utilizing triple-well technolo-gies are explained in detail, which has never been done anywhere in the lite-rature based on simulations or measurements.
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Collections - College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
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