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Results 1-3 of 3 (Search time: 0.003 seconds).
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment
Kim, Kwangeun
; Jang, Jaewon
Article
Issue Date
2020
Citation
CURRENT APPLIED PHYSICS, v.20, no.2, pp.293 - 297
Publisher
ELSEVIER
Schottky diode performance through interfacial passivation
김광은
Article
Issue Date
2019
Citation
Current Applied Physics, v.20, no.2, pp.293 - 297
Publisher
Korean Physical Society
Characterization of Young’s modulus of silicon versus temperature using a ‘‘beam deflection” method with a four-point bending fixture
Cho, Chun Hyung
Article
Issue Date
2009
Citation
Current Applied Physics, v.9, no.3, pp.538 - 545
Publisher
한국물리학회
1
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Author
Kim, Kwang eun
2
Cho, Chun Hyung
1
Subject
Band alignment
1
Dislocation
1
FILMS
1
GAN
1
GaN Schottky diode
1
Passivation
1
PEROVSKITE
1
Ultraviolet/ozone treatment
1
XPS
1
Date Issued
2010 - 2020
2
2009 - 2009
1
Type
Article
3
Language
English
2
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