5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조희형 | - |
dc.contributor.author | 김형탁 | - |
dc.date.available | 2020-07-10T04:34:30Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 1226-7244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/4498 | - |
dc.description.abstract | 5 MeV proton-irradiation with total dose of 1015 /cm2 was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국전기전자학회 | - |
dc.title | 5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates | - |
dc.title.alternative | 5-MeV Proton-irradiation characteristics of AlGaN/GaN –on-Si HEMTs with various Schottky metal gates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 김형탁 | - |
dc.identifier.bibliographicCitation | 전기전자학회논문지, v.22, no.2, pp.484 - 487 | - |
dc.relation.isPartOf | 전기전자학회논문지 | - |
dc.citation.title | 전기전자학회논문지 | - |
dc.citation.volume | 22 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 484 | - |
dc.citation.endPage | 487 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART002364734 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | AlGaN/GaN-on-Si | - |
dc.subject.keywordAuthor | high electron mobility transistors | - |
dc.subject.keywordAuthor | proton irradiation | - |
dc.subject.keywordAuthor | displacement damage | - |
dc.subject.keywordAuthor | Schottky contact. | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.