Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Jang, Eun-Pyo | - |
dc.contributor.author | Jo, Jung-Ho | - |
dc.contributor.author | Kim, Min-Seok | - |
dc.contributor.author | Yoon, Suk-Young | - |
dc.contributor.author | Lim, Seung-Won | - |
dc.contributor.author | Kim, Jiwan | - |
dc.contributor.author | Yang, Heesun | - |
dc.date.available | 2020-07-10T04:40:52Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/4809 | - |
dc.description.abstract | Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented via a St <spacing diaeresis> ober or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD-silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | HIGHLY LUMINESCENT | - |
dc.subject | WHITE LEDS | - |
dc.subject | EFFICIENT | - |
dc.subject | SHELL | - |
dc.subject | NANOCOMPOSITES | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | BACKLIGHT | - |
dc.subject | THICKNESS | - |
dc.subject | FILMS | - |
dc.title | Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yang, Heesun | - |
dc.identifier.doi | 10.1039/c8ra00119g | - |
dc.identifier.scopusid | 2-s2.0-85044027507 | - |
dc.identifier.wosid | 000430451800055 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.8, no.18, pp.10057 - 10063 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 10057 | - |
dc.citation.endPage | 10063 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | HIGHLY LUMINESCENT | - |
dc.subject.keywordPlus | WHITE LEDS | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | SHELL | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | BACKLIGHT | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | FILMS | - |
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