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Joule-heating induced crystallization of amorphous silicon films
- Authors
- 노재상
- Issue Date
- 31-Dec-2017
- Publisher
- IJETAE
- Citation
- IJETAE, v.Vol. 7, no.Issue 12, pp.208 - 210
- Journal Title
- IJETAE
- Volume
- Vol. 7
- Number
- Issue 12
- Start Page
- 208
- End Page
- 210
- ISSN
- 2250-2459
- Abstract
- Abstract? An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.
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