Ohmic Contact Properties of Non-Polar (10(1)over-bar0) m-Plane Bulk GaN Crystals
DC Field | Value | Language |
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dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Lee, Mira | - |
dc.contributor.author | Jang, Soohwan | - |
dc.date.available | 2020-07-10T04:51:32Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5116 | - |
dc.description.abstract | We report on the properties of Ti/Al/Ni/Au Ohmic contacts and their electrical anisotropy on undoped non-polar m-plane (10 (1) over bar0) GaN (m-GaN) bulk crystals. High-resolution X-ray rocking curve (XRC) analysis confirmed the high crystallinity of the m-GaN single crystal. Peak widths of the XRC were measured to be 50 and 128 arcsec along the [11 (2) over bar0]GaN and [0001](GaN) directions, respectively. A minimum specific contact resistance of similar to 1.7 x 10(-4) Omega.cm(2) was obtained after annealing at 850 degrees C on transmission line method patterns along the [1 (1) over bar 00](GaN) direction. Sheet resistances parallel to the [0001](GaN) direction were found to be approximately 2 to 3 times higher than those parallel to the [11 (2) over bar0](GaN) direction, indicating significant electrical anisotropy. In addition, sheet resistance increased approximately linearly with increasing azimuth angle for all annealing temperatures. The basal-plane stacking fault-induced carrier scattering is thought to be primarily responsible for the anisotropic conductivity in the case of m-GaN bulk crystals. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIELDS | - |
dc.title | Ohmic Contact Properties of Non-Polar (10(1)over-bar0) m-Plane Bulk GaN Crystals | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, Kwang Hyeon | - |
dc.identifier.doi | 10.1166/sam.2017.3199 | - |
dc.identifier.scopusid | 2-s2.0-85040443215 | - |
dc.identifier.wosid | 000419754900016 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.9, no.11, pp.1983 - 1986 | - |
dc.relation.isPartOf | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1983 | - |
dc.citation.endPage | 1986 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELDS | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | m-Plane | - |
dc.subject.keywordAuthor | Ohmic | - |
dc.subject.keywordAuthor | Anisotropy | - |
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