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Interfacial trap-induced confinement of mobile carriers during illumination at a pentacene/lead-sulfide functional interface
- Authors
- Kim, Youngjun; Park, Byoungnam
- Issue Date
- 25-Sep-2017
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Lead sulfide; Interface; Transistor
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.718, pp.453 - 458
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 718
- Start Page
- 453
- End Page
- 458
- ISSN
- 0925-8388
- Abstract
- Interfacial electronic properties at the pentacene/lead sulfide (PbS) interface in the dark under illumination were studied. With a small size of PbS colloidal quantum dot (CQD) (2.7 nm), photoinduced charge transfer at the pentacene/PbS CQD interface leads to a large threshold voltage shift in a pentacene/PbS CQD field effect transistor (FET). Through estimation of interfacial trap density by sub-threshold slope measurements in an FET structure, the mechanism by which threshold voltage shift occurs is discussed. (C) 2017 Elsevier B.V. All rights reserved.
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Related Researcher
- Park, Byoung Nam
- Engineering (Advanced Materials)