Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing
DC Field | Value | Language |
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dc.contributor.author | Jung, Sunwoo | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Jang, Soohwan | - |
dc.date.available | 2020-07-10T04:54:53Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2017-09-15 | - |
dc.identifier.issn | 1530-437X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5290 | - |
dc.description.abstract | Polydimethylglutarimide (PMGI), a photosensitive positive type resin used in photoresists, is shown to be an effective moisture barrier for mitigating the effect of humidity on the sensitivity of Pt-AlGaN/GaN Schottky diodes for hydrogen detection. The maximum relative current change observed in PMGI-encapsulated diodes forward biased at 1.3 V and exposed to 500 ppm of dry or humid H-2 is identical within experimental error over the temperature range 25 degrees C-300 degrees C and peaks at 200 degrees C in both cases (4.4 x 10(6)% increase compared with the current under N-2 ambient). Unencapsulated diodes exhibit a decrease of approximately one ninth of the current signal for detection of 500 ppm of H-2 in the presence of water. The PMGI is easily spun-on to the sensors, and does not degrade until temperatures of 335 degrees C or higher, making it a suitable moisture barrier for most hydrogen sensing applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ELECTRON-MOBILITY TRANSISTOR | - |
dc.subject | GAN SCHOTTKY DIODES | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SENSOR | - |
dc.subject | NANONETWORK | - |
dc.subject | PERFORMANCE | - |
dc.title | Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, Kwang Hyeon | - |
dc.identifier.doi | 10.1109/JSEN.2017.2733343 | - |
dc.identifier.scopusid | 2-s2.0-85028925930 | - |
dc.identifier.wosid | 000408393300003 | - |
dc.identifier.bibliographicCitation | IEEE SENSORS JOURNAL, v.17, no.18, pp.5817 - 5822 | - |
dc.relation.isPartOf | IEEE SENSORS JOURNAL | - |
dc.citation.title | IEEE SENSORS JOURNAL | - |
dc.citation.volume | 17 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 5817 | - |
dc.citation.endPage | 5822 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTOR | - |
dc.subject.keywordPlus | GAN SCHOTTKY DIODES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | NANONETWORK | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Hydrogen | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | moisture barrier | - |
dc.subject.keywordAuthor | encapsulation | - |
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