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Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing

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dc.contributor.authorJung, Sunwoo-
dc.contributor.authorBaik, Kwang Hyeon-
dc.contributor.authorRen, Fan-
dc.contributor.authorPearton, Stephen J.-
dc.contributor.authorJang, Soohwan-
dc.date.available2020-07-10T04:54:53Z-
dc.date.created2020-07-06-
dc.date.issued2017-09-15-
dc.identifier.issn1530-437X-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5290-
dc.description.abstractPolydimethylglutarimide (PMGI), a photosensitive positive type resin used in photoresists, is shown to be an effective moisture barrier for mitigating the effect of humidity on the sensitivity of Pt-AlGaN/GaN Schottky diodes for hydrogen detection. The maximum relative current change observed in PMGI-encapsulated diodes forward biased at 1.3 V and exposed to 500 ppm of dry or humid H-2 is identical within experimental error over the temperature range 25 degrees C-300 degrees C and peaks at 200 degrees C in both cases (4.4 x 10(6)% increase compared with the current under N-2 ambient). Unencapsulated diodes exhibit a decrease of approximately one ninth of the current signal for detection of 500 ppm of H-2 in the presence of water. The PMGI is easily spun-on to the sensors, and does not degrade until temperatures of 335 degrees C or higher, making it a suitable moisture barrier for most hydrogen sensing applications.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectELECTRON-MOBILITY TRANSISTOR-
dc.subjectGAN SCHOTTKY DIODES-
dc.subjectROOM-TEMPERATURE-
dc.subjectSENSOR-
dc.subjectNANONETWORK-
dc.subjectPERFORMANCE-
dc.titleTemperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing-
dc.typeArticle-
dc.contributor.affiliatedAuthorBaik, Kwang Hyeon-
dc.identifier.doi10.1109/JSEN.2017.2733343-
dc.identifier.scopusid2-s2.0-85028925930-
dc.identifier.wosid000408393300003-
dc.identifier.bibliographicCitationIEEE SENSORS JOURNAL, v.17, no.18, pp.5817 - 5822-
dc.relation.isPartOfIEEE SENSORS JOURNAL-
dc.citation.titleIEEE SENSORS JOURNAL-
dc.citation.volume17-
dc.citation.number18-
dc.citation.startPage5817-
dc.citation.endPage5822-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusELECTRON-MOBILITY TRANSISTOR-
dc.subject.keywordPlusGAN SCHOTTKY DIODES-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSENSOR-
dc.subject.keywordPlusNANONETWORK-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordAuthorHydrogen-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthormoisture barrier-
dc.subject.keywordAuthorencapsulation-
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