A carrier transport model in the high-resistance state of lead-methylamine iodide-based resistive memory devices
DC Field | Value | Language |
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dc.contributor.author | Kwon, Yongwoo | - |
dc.contributor.author | Park, Nayoung | - |
dc.contributor.author | Cha, Pil-Ryung | - |
dc.date.available | 2020-07-10T05:00:47Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5455 | - |
dc.description.abstract | Methylamine lead iodide (CH3NH3PbI3), which has recently been in the spotlight as a solar cell material, has also recently shown promise for use as an active material in resistive memory cells with ultralow operation voltages, good transparencies, and flexibilities. The material's defects, which govern its properties, differ vastly depending on the fabrication process. However, the defect chemistry is not yet entirely understood. We have therefore established a macroscopic transport model with defect-related model parameters, such as trap density, trap energy level, and Fermi level, in order to estimate these parameters for fabricated samples based on their electrical data. Our model will serve as an efficient way to analyze the properties of the active material. (C) 2017 Author(s). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HALIDE PEROVSKITES | - |
dc.subject | RECOMBINATION CENTERS | - |
dc.subject | LENGTHS | - |
dc.title | A carrier transport model in the high-resistance state of lead-methylamine iodide-based resistive memory devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Yongwoo | - |
dc.identifier.doi | 10.1063/1.4998432 | - |
dc.identifier.scopusid | 2-s2.0-85027330948 | - |
dc.identifier.wosid | 000409090200050 | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.7, no.8 | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 7 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HALIDE PEROVSKITES | - |
dc.subject.keywordPlus | RECOMBINATION CENTERS | - |
dc.subject.keywordPlus | LENGTHS | - |
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