Ohmic Contact Properties of Photo-Chemically Etched Nonpolar a-Plane (11-20) GaN Films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 백광현 | - |
dc.date.available | 2020-07-10T05:01:11Z | - |
dc.date.created | 2020-07-08 | - |
dc.date.issued | 2017-07-06 | - |
dc.identifier.issn | 2162-8777 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5519 | - |
dc.description.abstract | Nonpolar a-plane (11-20) GaN (a-GaN) was photo-chemically etched under ultraviolet illumination using alkali KOH solution, and the Ohmic contact properties on the etched a-GaN epitaxial layer were investigated. After photo-chemical etching, the striated surface morphology along the c-axis [0001] direction was obtained having triangular prisms consisting of m-plane {10-10} facets. The properties of Ti/Al/Ni/Au Ohmic contact on surface-textured a-GaN ?lms were studied with transmission line method patterns aligned along the speci?c crystal orientations. The minimum speci?c contact resistance of 9.97×10?5 cm2 was achieved along the c-axis on the etched GaN surface at the annealing temperature of 750?C.The etched a-GaN showed higher electrical conductivity along the c-axis than along m-axis. This anisotropic behavior is in contrast to that of the unetched a-GaN where carrier scattering by basal plane stacking faults in the direction perpendicular to the c-axis is a major factor in determining opposite anisotropic conductivity. The higher conductivity along the c-axis of the etched a-GaN ?lm could be explained by more dominant effect of surface roughness scattering. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ECS | - |
dc.title | Ohmic Contact Properties of Photo-Chemically Etched Nonpolar a-Plane (11-20) GaN Films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 백광현 | - |
dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.6, no.11, pp.3001 - 3004 | - |
dc.relation.isPartOf | ECS Journal of Solid State Science and Technology | - |
dc.citation.title | ECS Journal of Solid State Science and Technology | - |
dc.citation.volume | 6 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3001 | - |
dc.citation.endPage | 3004 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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