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Investigation of carbon-doped buffer effects on microwave performance of AlGaN/GaN-on-Si HEMT

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dc.contributor.author차호영-
dc.date.available2020-07-10T05:01:14Z-
dc.date.created2020-07-08-
dc.date.issued2017-07-04-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5526-
dc.language영어-
dc.language.isoen-
dc.publisherIEIE-
dc.titleInvestigation of carbon-doped buffer effects on microwave performance of AlGaN/GaN-on-Si HEMT-
dc.typeArticle-
dc.contributor.affiliatedAuthor차호영-
dc.identifier.bibliographicCitationAWAD proceeding, v.1, no.1, pp.1 - 4-
dc.relation.isPartOfAWAD proceeding-
dc.citation.titleAWAD proceeding-
dc.citation.volume1-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.description.journalClass1-
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