Growth and characterization of single, InGaN quantum well in nonpolar a-plane (11(2)over-bar0) InGaN/GaN light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Bang, Kyuhyun | - |
dc.contributor.author | Jung, Sukkoo | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Myoung, Jae-Min | - |
dc.date.available | 2020-07-10T05:02:24Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5690 | - |
dc.description.abstract | We studied the In incorporation efficiency and composition distribution in a nonpolar a-plane InGaN (a-InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surfaces. It was clear that the In incorporation efficiency on a nonpolar GaN surface is lower than that on a polar c-plane GaN. In addition, the In incorporation rate on an a-InGaN layer could be increased by decreasing the Will ratio without lowering the growth temperature. In the case of the a-InGaN layer, a composition pulling effect was also observed, suggesting that the In composition of the a-InGaN layer increases along the normal growth direction from the bottom to the top of the InGaN QW layer. Using high-resolution XRD 2 theta-omega scans, we found that there existed convex graded In compositions ranging from 4 to 12.7% in an a-InGaN QW layer along the growth direction. No wavelength shift with a current injection of 20-100 mA confirmed the absence of a polarization field. The shift in the electroluminescence (EL) peak energy was similar to 11 meV between the electric field parallel and perpendicular to the c-axis components, which was caused by the valence band splitting due to the in-plane compressive strain of the 10 nm a-InGaN QW layer. The EL polarization anisotropy was clearly observed with a polarization ratio of 55%. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | INDIUM INCORPORATION | - |
dc.subject | HIGH-POWER | - |
dc.title | Growth and characterization of single, InGaN quantum well in nonpolar a-plane (11(2)over-bar0) InGaN/GaN light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, Kwang Hyeon | - |
dc.identifier.doi | 10.1016/j.cap.2017.03.016 | - |
dc.identifier.scopusid | 2-s2.0-85015856373 | - |
dc.identifier.wosid | 000400717300003 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.17, no.6, pp.842 - 846 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 842 | - |
dc.citation.endPage | 846 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002216639 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INDIUM INCORPORATION | - |
dc.subject.keywordPlus | HIGH-POWER | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | Quantum well | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
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