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Improvement of Bias-Induced Vth Stability in Recessed-Gate AlGaN/GaN MIS-HEMTs with Nitrogen-Incorporated Al2O3 Gate Insulator
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 차호영 | - |
| dc.date.available | 2020-07-10T05:22:00Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2017-02-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/6085 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | 학회 | - |
| dc.title | Improvement of Bias-Induced Vth Stability in Recessed-Gate AlGaN/GaN MIS-HEMTs with Nitrogen-Incorporated Al2O3 Gate Insulator | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 차호영 | - |
| dc.identifier.bibliographicCitation | 학회, v.00, no.00, pp.00 - 00 | - |
| dc.relation.isPartOf | 학회 | - |
| dc.citation.title | 학회 | - |
| dc.citation.volume | 00 | - |
| dc.citation.number | 00 | - |
| dc.citation.startPage | 00 | - |
| dc.citation.endPage | 00 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 2 | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)