Effect of Post-Metallization Annealing on 4H-SiC Metal-Oxide-Semiconductor with Mo Gate Electrode
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 차호영 | - |
dc.date.available | 2020-07-10T05:22:00Z | - |
dc.date.created | 2020-07-08 | - |
dc.date.issued | 2017-02-07 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/6086 | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 학회 | - |
dc.title | Effect of Post-Metallization Annealing on 4H-SiC Metal-Oxide-Semiconductor with Mo Gate Electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 차호영 | - |
dc.identifier.bibliographicCitation | 학회, v.00, no.00, pp.00 - 00 | - |
dc.relation.isPartOf | 학회 | - |
dc.citation.title | 학회 | - |
dc.citation.volume | 00 | - |
dc.citation.number | 00 | - |
dc.citation.startPage | 00 | - |
dc.citation.endPage | 00 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 2 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.