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Plasma-enhanced atomic layer deposition of tungsten films using tungsten chloride precursor

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ArticleIssue Date2018CitationALD 2018, v.0, no.0, pp.0 - 0PublisherAmerican Vacuum Society
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ArticleIssue Date2018Citationdummy, v.0, no.0, pp.0 - 0Publisherdummy
Self-Limiting Atomic Layer Deposition of Nickel Oxide and Nickel Sulfide Thin Films

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ArticleIssue Date2018Citation한국진공학회 학술발표회초록집, v.0, no.0, pp.191 - 191Publisher한국진공학회
Tungsten thin films deposited by plasma-enhanced atomic layer deposition with tungsten chloride precursor

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ArticleIssue Date2018CitationICMAP 2018, v.0, no.0, pp.0 - 0PublisherICMAP 2018
Quantum mechanical analysis of chemical reactions during ALD

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ArticleIssue Date2019CitationChina-Korea ALD Workshop, v.-, no.-, pp.0 - 0PublisherFudan University
Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O-3 reactants

Ko, Byeong Guk; Nguyen, Chi Thang; Gu, Bonwook; Khan, Mohammad Rizwan; Park, Kunwoo; Oh, Hongjun; Park, Jungwon; Shong, Bonggeun; Lee, Han-Bo-Ram

ArticleIssue Date2021CitationDALTON TRANSACTIONS, v.50, no.48, pp.17935 - 17944PublisherROYAL SOC CHEMISTRY
Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Lee, Y.; Seo, S.; Nam, T.; Lee, H.; Yoon, H.; Sun, S.; Oh, I.-K.; Lee, S.; Shong, B.; Seo, J.H., et al.

ArticleIssue Date2021CitationApplied Surface Science, v.568PublisherElsevier B.V.
Evaluation of silicon tetrahalide precursors for low-temperature thermal atomic layer deposition of silicon nitride

Yu, Neung-Kyung; Moon, Chan Hui; Park, Jeongwoo; Lee, Han-Bo-Ram; Shong, Bonggeun

ArticleIssue Date2021CitationAPPLIED SURFACE SCIENCE, v.565PublisherELSEVIER
Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

Park, J.; Eom, H.; Kim, S.H.; Seok, T.J.; Park, T.J.; Lee, S.W.; Shong, B.

ArticleIssue Date2021CitationMaterials Today Advances, v.12PublisherElsevier Ltd
Quantum chemical studies on surface chemical reactions during thin film deposition

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ArticleIssue Date2017CitationHyMaP 2017, v.HyMaP 2017, no.HyMaP 2017, pp.0 - 0PublisherGlobal Frontier R&D Center for Hybrid Interface Materials
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