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MOS-HFET fabricated on AlGaN/GaN-on-Si(110) grown by NH3 MBE
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 차호영 | - |
| dc.date.available | 2020-07-10T06:01:30Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2016-07-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/7626 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AWAD | - |
| dc.title | MOS-HFET fabricated on AlGaN/GaN-on-Si(110) grown by NH3 MBE | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 차호영 | - |
| dc.identifier.bibliographicCitation | AWAD proceeding , v.1, no.1, pp.1 - 1 | - |
| dc.relation.isPartOf | AWAD proceeding | - |
| dc.citation.title | AWAD proceeding | - |
| dc.citation.volume | 1 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 1 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)