Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Schottky diode performance through interfacial passivation
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김광은 | - |
| dc.date.available | 2020-07-10T02:36:33Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2019-11-23 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/833 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Korean Physical Society | - |
| dc.title | Schottky diode performance through interfacial passivation | - |
| dc.title.alternative | Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 김광은 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.20, no.2, pp.293 - 297 | - |
| dc.relation.isPartOf | Current Applied Physics | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 20 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 293 | - |
| dc.citation.endPage | 297 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Kwang eun
- Science & Technology (전자전기융합공학과)