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Schottky diode performance through interfacial passivationImproving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment
- Other Titles
- Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment
- Authors
- 김광은
- Issue Date
- 23-Nov-2019
- Publisher
- Korean Physical Society
- Citation
- Current Applied Physics, v.20, no.2, pp.293 - 297
- Journal Title
- Current Applied Physics
- Volume
- 20
- Number
- 2
- Start Page
- 293
- End Page
- 297
- ISSN
- 1567-1739
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Related Researcher
- Kim, Kwang eun
- Science & Technology (전자전기융합공학과)