Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae-Gil | - |
dc.contributor.author | Kim, Hyun-Seop | - |
dc.contributor.author | Lee, Jung-Yeon | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.date.available | 2020-07-10T06:58:07Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9266 | - |
dc.description.abstract | We have investigated the effects of post-metallization-annealing (PMA) in oxygen atmosphere on recessed-gate GaN metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs). The flat band voltage of MOS is a function of bulk and interface charges in the oxide, which strongly depends on a post-annealing process as well as deposition conditions. A positive threshold voltage shift enabling normally-off operation has been achieved by an O-2 PMA process where the GaN MOSHFET employed an ICPCVD SiO2 gate oxide with a Ni/Au metal gate. According to the analysis using energy dispersive x-ray spectroscopy in transmission electron microscopy and x-ray photoelectron spectroscopy, it is suggested that the improved SiO2/GaN interface quality with an enhanced metallic-like Ga level was responsible for the positive shift in threshold voltage. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | P-GAN | - |
dc.subject | CONTACTS | - |
dc.title | Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1088/0268-1242/30/11/115008 | - |
dc.identifier.scopusid | 2-s2.0-84945937498 | - |
dc.identifier.wosid | 000365240800025 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.11 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 30 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | P-GAN | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | post-metallization-annealing | - |
dc.subject.keywordAuthor | oxygen atmosphere | - |
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