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Defect-curing function of self-limiting Al2O3 thin films in graphene materials

Authors
Kwon, Kyoung-WooChoi, Jung-WanJung, Min WookYou, Yil-HwanChang, RaymondSeo, Jung HwanSong, WooseokAn, Ki-SeokHwang, Jin-Ha
Issue Date
Aug-2015
Publisher
ELSEVIER SCI LTD
Keywords
Graphene; Al2O3; Robustness; Impedance spectroscopy; Atomic layer deposition
Citation
CERAMICS INTERNATIONAL, v.41, no.7, pp.8360 - 8366
Journal Title
CERAMICS INTERNATIONAL
Volume
41
Number
7
Start Page
8360
End Page
8366
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9595
DOI
10.1016/j.ceramint.2015.03.024
ISSN
0272-8842
Abstract
Impedance spectroscopy was applied to 2-dimensional graphene materials that were thermally grown on copper substrates to quantitatively monitor the quality of the as-grown graphene materials without the subsequent transfer process. The presence of the graphene layer prevents the dissolution of the metallic copper elements in the corrosive electrolyte and provides an interface between the ionic electrolyte and electronic graphene/copper materials. The highest impedance appears at the graphene/electrolyte to be associated with electrochemically robust graphene materials, i.e., the as-grown graphene materials subjected to atomic layer deposition of Al2O3. Such an effect is attributed to the anti-corrosive protection of graphene materials and the defect-curing function of Al2O3 in graphene materials. The impedance-based information can be exploited in-situ without the use of any destructive approaches to evaluate the electrical perfectness vulnerable to preparation environments. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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