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Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer
- Authors
- Park, Chan-Rok; Kim, Shin Ik; Moon, Seon Young; You, Yil-Hwan; Seo, Jung Hwan; Baek, Seung-Hyub; Kim, Seong Keun; Kang, Chong-Yun; Kim, Jin-Sang; Hwang, Jin-Ha
- Issue Date
- Jul-2015
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Impedance spectroscopy; 2DEG; Interface; LaAlO3/SrTiO3; Oxygen vacancies
- Citation
- JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.82, pp.60 - 66
- Journal Title
- JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- Volume
- 82
- Start Page
- 60
- End Page
- 66
- ISSN
- 0022-3697
- Abstract
- The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport. (C) 2015 Elsevier Ltd. All rights reserved.
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Related Researcher
- Hwang, Jin ha
- Engineering (Advanced Materials)