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1.3 nm Effective Oxide Thickness Self-aligned InGaAs MOS-HEMT Using SiNx/HfO2 Bi-layer as Gate Insulator
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 차호영 | - |
| dc.date.available | 2020-07-10T07:03:40Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2015-06-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9708 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AWAD | - |
| dc.title | 1.3 nm Effective Oxide Thickness Self-aligned InGaAs MOS-HEMT Using SiNx/HfO2 Bi-layer as Gate Insulator | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 차호영 | - |
| dc.identifier.bibliographicCitation | AWAD proceeding, v.1, no.1, pp.195 - 197 | - |
| dc.relation.isPartOf | AWAD proceeding | - |
| dc.citation.title | AWAD proceeding | - |
| dc.citation.volume | 1 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 195 | - |
| dc.citation.endPage | 197 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)